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BSC014N03MS G
OptiMOSTM3 M-Series Power-MOSFET
Features * Optimized for 5V driver application (Notebook, VGA, POL) * Low FOMSW for High Frequency SMPS * 100% avalanche tested * N-channel * Very low on-resistance R DS(on) @ V GS=4.5 V * Excellent gate charge x R DS(on) product (FOM) * Qualified according to JEDEC1) for target applications * Superior thermal resistance * Pb-free plating; RoHS compliant; * Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 1.4 1.75 100 PG-TDSON-8 A V m
Type BSC014N03MS G
Package PG-TDSON-8
Marking 014N03MS
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C V GS=4.5 V, T C=25 C V GS=4.5 V, T C=100 C V GS=4.5 V, T A=25 C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage
1)
Value 100 100 100
Unit A
100
30 400 50 340 20 mJ V
I D,pulse I AS E AS V GS
T C=25 C T C=25 C I D=50 A, R GS=25
J-STD20 and JESD22
Rev. 1.5
page 1
2009-10-22
BSC014N03MS G
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 C T A=25 C, R thJA=50 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 139 2.5 -55 ... 150 55/150/56 C Unit W
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case R thJC bottom top Device on PCB R thJA 6 cm2 cooling area2) 0.9 20 50 K/W
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=4.5 V, I D=30 A V GS=10 V, I D=30 A Gate resistance Transconductance
2)
30 1 -
0.1
2 1
V
A
0.7
10 10 1.4 1.2 1.5 140
100 100 1.75 1.4 2.6 S nA m
RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A
70
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information
3)
Rev. 1.5
page 2
2009-10-22
BSC014N03MS G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=30 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=30 A, V GS=0 to 4.5 V 26 16 13 23 63 2.6 130 34 21 22 35 84 173 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=4.5 V, I D=30 A, R G=1.6 V GS=0 V, V DS=15 V, f =1 MHz 10000 2600 210 32 16 43 16 13000 pF 3500 ns Values typ. max. Unit
Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage
Q g(sync) Q oss
-
55 70
73 93
nC
IS I S,pulse V SD
T C=25 C V GS=0 V, I F=30 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s
-
0.79
100 400 1.1
A
V
Reverse recovery charge
4) 5)
Q rr
-
-
30
nC
See figure 13 for more detailed information See figure 16 for gate charge parameter definition
Rev. 1.5
page 3
2009-10-22
BSC014N03MS G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C) parameter: V GS
150 120
120
100
4.5 V 10 V
80 90
P tot [W]
I D [A]
60 30 0 0 40 80 120 160
60
40
20
0 0 40 80 120 160
T C [C]
T C [C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
103
limited by on-state resistance 10 s
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
10
1 s
102
DC
100 s
1
1 ms
Z thJC [K/W]
I D [A]
0.5
10
1
10 ms
0.2
0.1 100
0.1
0.05 0.02 0.01
10-1 10
-1
10
0
10
1
10
2
0.01
single pulse
0 0 0 0 0 0 1
10-6
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.5
page 4
2009-10-22
BSC014N03MS G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
300
4V 5V 10 V 3V 3.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
3
250
200
2
3.2 V 3.5 V 4V 4.5 V 6V 5V 10 V
150
3V
100
2.8 V
R DS(on) [m]
1 0 3 0
3.2 V
I D [A]
50
0 0 1 2
10
20
30
40
50
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
280
8 Typ. forward transconductance g fs=f(I D); T j=25 C
320
240
280
200
240
200 160
g fs [S]
150 C 25 C
I D [A]
160
120
120 80 80
40
40
0 0 1 2 3 4 5
0 0 40 80 120 160
V GS [V]
I D [A]
Rev. 1.5
page 5
2009-10-22
BSC014N03MS G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 A
3
2.5
2
2
R DS(on) [m]
98 %
typ
V GS(th) [V]
100 140 180
1.5
1
1
0.5
0 -60 -20 20 60
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
105
1000
25 C 150 C, 98%
104
Ciss Coss
100
150 C 25 C, 98%
C [pF]
103
Crss
I F [A]
10 1 0 10 20 30 0.0
102
101
0.5
1.0
1.5
2.0
V DS [V]
V SD [V]
Rev. 1.5
page 6
2009-10-22
BSC014N03MS G
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
100
14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD
12
15 V
10
25 C 100 C 125 C 6V 24 V
8
10
V GS [V]
1 10 100 1000
I AV [A]
6
4
2
1
0 0 20 40 60 80 100 120 140
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
34
V GS
32
Qg
30
V BR(DSS) [V]
28
26
V g s(th)
24
22
Q g(th) Q gs
-60 -20 20 60 100 140 180
Q sw Q gd
Q g ate
20
T j [C]
Rev. 1.5
page 7
2009-10-22
BSC014N03MS G
Package Outline PG-TDSON-8: Outline PG-TDSON-8
Footprint Dimensions in mm Rev. 1.5 page 8 2009-10-22
BSC014N03MS G
Package Outline PG-TDSON-8: Tape
Dimensions in mm Rev. 1.5 page 9 2009-10-22
BSC014N03MS G
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.5
page 10
2009-10-22

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